Semiconductor device having an SOI structure

Details Semiconductor device having an SOI structure Semiconductor device having an SOI structure

1995-05-31

1997-04-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257349, 257351, 257354, H01L 2701

Patent

active

056190530

ABSTRACT:
Generation of parasitic transistor in active layer edge is prevented, in an NMOS region of a semiconductor layer (21) on an insulating film (20), boron ions are implanted by rotary oblique injection, using a nitride film (23) and a resist (253a) as mask. In the vicinity of a region for separating element by LOCOS method, that is, only in the edge region of the semiconductor layer (21) as the active layer of NMOS transistor, boron ions are implanted by about 3.times.10.sup.13 /cm.sup.2. After LOCOS oxidation, the impurity concentration is heightened to such a level as the boron ions may not be sucked up into the oxide film.

REFERENCES:
patent: 5343051 (1994-08-01), Yamaguchi et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.

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