Single-electron semiconductor device

Details Single-electron semiconductor device Single-electron semiconductor device

1996-09-13

1998-12-01

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 37, 257 39, H01L 2701

Patent

active

058442790

ABSTRACT:
A semiconductor device which includes, a substrate, an insulating layer formed on the substrate, a silicon layer having an exposed surface constituted by a Si (100) face, the silicon layer being provided with a tapered recess having a bottom at which a part of the silicon layer is remained without exposing the insulating layer, a first conductive region constituted by the silicon layer remaining at the bottom of the tapered recess, a second and a third conductive regions formed on both sides of the tapered recess respectively, a first insulating film formed on an inner surface of the tapered recess, and an electrode formed in the tapered recess. A flow of electron resulting from the tunneling effect from the second conductive region via the first insulating film to the third conductive region is controlled by controlling a voltage to be impressed onto the electrode.

REFERENCES:
patent: 5485028 (1996-01-01), Takahashi et al.
patent: 5567966 (1996-10-01), Hwang
IEDM 94, Pp. 938-940, 1994, Yasuo Takahashi, et al., "Conductance Oscillations of a Si Single Electron Transistor At Room Temperature", Dec. 1994.
Appl. Phys. Lett., vol. 67, No. 7, pp. 938-940, E. Leobandung, et al., "Observation of Quantum Effects and Coulomb Blockade in Silicon Quantum-Dot Transistors at Temperatures Over K", Aug. 1995.

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