Method for forming residue free patterned conductor layers upon

Details Method for forming residue free patterned conductor layers upon Method for forming residue free patterned conductor layers upon

1995-12-27

1997-04-08

Kunemund, Robert

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

216 41, 216 46, 438694, 438704, 438948, C23F 100

Patent

active

056183844

ABSTRACT:
A method for forming a residue free patterned conductor layer upon a high step height integrated circuit substrate. First, there is provided a semiconductor substrate having formed thereon a high step height patterned integrated circuit layer. Formed upon the high step height patterned integrated circuit layer is a blanket conductor layer, and formed upon the blanket conductor layer is a patterned photoresist layer. The portions of the blanket conductor layer exposed through the patterned photoresist layer are etched through an anisotropic etch process to leave remaining a patterned conductor layer upon the surface of the high step height patterned integrated circuit layer and conductor layer residues at a lower step level of the high step height patterned integrated circuit layer. The patterned photoresist layer is then reflowed to cover exposed edges of the patterned conductor layer. Finally, the conductor layer residues at the lower step level of the high step height patterned integrated circuit layer are removed through an isotropic etch process.

REFERENCES:
patent: 4795718 (1989-01-01), Beitman
patent: 4981809 (1991-01-01), Mitsuaki et al.
patent: 5007984 (1991-04-01), Tsutsumi et al.
patent: 5231051 (1993-07-01), Baldi et al.
patent: 5238872 (1993-08-01), Thalapaneni
patent: 5371025 (1994-12-01), Sung
patent: 5395781 (1995-03-01), Wilhoit
patent: 5403435 (1995-04-01), Cathey et al.
patent: 5505322 (1996-04-01), Shinohara et al.

Affiliated with

Also associated with

Rating

Method for forming residue free patterned conductor layers upon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming residue free patterned conductor layers upon , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming residue free patterned conductor layers upon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2395722