Semiconductor device with a gettering sink material layer

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257629, 257913, 437 12, H01L 21322

Patent

active

053748425

ABSTRACT:
Silicon substrate is provided with silicon single-crystalline wafer, natural oxide film and poly-crystalline silicon film. The thickness of natural oxide film is controlled to be less than 10 .ANG.. Since the thickness of natural oxide film is made less than 10 .ANG., heavy metals travel smoothly from silicon single-crystalline wafer to poly-crystalline silicon film in the process of gettering. In other words, it is possible to enhance gettering effect.

REFERENCES:
patent: 4053335 (1977-10-01), Hu

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with a gettering sink material layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a gettering sink material layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a gettering sink material layer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2387687

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.