Active solid-state devices (e.g. – transistors – solid-state diode – Mosfet type gate sidewall insulating spacer
Patent
1996-12-02
1999-12-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Mosfet type gate sidewall insulating spacer
257316, H01L 27088
Patent
active
060085444
ABSTRACT:
The present invention relates to a semiconductor device including an insulated-gate field effect transistor having a contact hole formed in an inter-layer insulating film on an S/D region adjacent to a gate electrode and has an object to provide a semiconductor device capable of securing the uniformity of the thickness of an insulating film between a gate electrode and an S/D electrode or interconnection layer while integrating elements at a high density. The semiconductor device comprises an S/D region formed in a semiconductor layer at the both sides of the gate electrode, an insulating side wall formed on side surface of the gate electrode, a conducting side wall covering side surface of the insulating side wall and contacting the S/D region, a covering insulating film for covering the gate electrode, S/D region, insulating side wall, and conducting side wall, and a contact hole formed in the covering insulating film on the S/D region of at least one side.
REFERENCES:
patent: 5132758 (1992-07-01), Minami et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5194929 (1993-03-01), Ohshima et al.
Fujitsu Limited
Prenty Mark V.
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