Structure of buried bit line

Details Structure of buried bit line Structure of buried bit line

1998-07-10

1999-12-28

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257910, H01L 2976

Patent

active

060085223

ABSTRACT:
The structure of a buried bit line. A substrate is provided and a trench is, formed within the substrate. Next, a trench insulating layer is located on a portion of the trench surface to expose a top corner of the trench. Then, a first conductive layer is fills the trench and forms a surface. Afterwards, a second conductive layer is formed on the surface and fills the trench, wherein the second conductive layer makes contact with the top corner, and a shallow junction region is located at the top corner and makes contact with the second conductive layer.

REFERENCES:
patent: 5869863 (1999-02-01), Wen
patent: 5932909 (1999-08-01), Kato et al.

Affiliated with

Also associated with

Rating

Structure of buried bit line does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure of buried bit line, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of buried bit line will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2384018