Method for fabricating semiconductor device and etchant for poly

Details Method for fabricating semiconductor device and etchant for poly Method for fabricating semiconductor device and etchant for poly

1976-06-11

1978-09-12

Esposito, Michael F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156659, 156664, 156668, 156901, 427 96, 96 362, 96 384, 252 791, H01L 700, C09K 1300, C23F 100

Patent

active

041135504

ABSTRACT:
A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

REFERENCES:
patent: 3395057 (1968-07-01), Fick
patent: 3700497 (1972-10-01), Epifaro et al.
Agnihotri et al., IBM Tech. Discl. Bull., Solvent . . . Coating, vol. 16, No. 4 (1973), p. 1284.
Loukianoff, IBM Tech. Dis. Bull., Etchant . . . Cured Polyimides, vol. 15, No. 9, (Feb. 1973), p. 2820.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device and etchant for poly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device and etchant for poly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device and etchant for poly will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2382730