Process for the production of silicon layers

Details Process for the production of silicon layers Process for the production of silicon layers

1977-05-11

1978-09-12

Esposito, Michael F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 427 86, 427345, 427404, 427430B, 427431, 148171, H01L 21368, H01L 21208

Patent

active

041135482

ABSTRACT:
A process for the production of a semi-conducting silicon layer on a foreign substrate by means of melt epitaxy comprises the steps of dissolving silicon in an aluminum-zinc melt and drawing a strip-like oxidized aluminum film or a strip-like oxidized aluminum film provided with a mono-atomic silicon or metal coating across the surface of the melt solution.

REFERENCES:
patent: 3650822 (1972-03-01), Grabmaier
patent: 3785884 (1974-01-01), Lockwood
patent: 3897281 (1975-07-01), Gilbert
Druminski et al., Chem. Abst. vol. 85 (1975) p. 71089(b) Formation of . . . Sapphire Substrate.

Affiliated with

Also associated with

Rating

Process for the production of silicon layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the production of silicon layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the production of silicon layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2382724