Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1993-12-03

1995-04-04

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 51, 437174, 437200, 437233, 257 66, H01L 2120

Patent

active

054037727

ABSTRACT:
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

REFERENCES:
patent: 4727044 (1988-02-01), Liu et al.
patent: 5147826 (1992-09-01), Yamazaki
patent: 5313076 (1994-05-01), Yamazaki et al.

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