Semiconductor non-volatile memory device and method of manufactu

Details Semiconductor non-volatile memory device and method of manufactu Semiconductor non-volatile memory device and method of manufactu

1992-12-08

1994-06-28

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 365185, H01L 2968

Patent

active

053249720

ABSTRACT:
According to this invention, a semiconductor non-volatile memory device includes a semiconductor substrate, insulating films formed on the semiconductor substrate and having at least two types of gate insulating films having different thicknesses and a first conductive film formed on the insulating films and electrically floating from the semiconductor substrate through the insulating films. These at least two types of gate insulating films include a first insulating film formed on said semiconductor substrate and a first diffusion layer of a conductivity type and a second insulating film formed on said semiconductor substrate and a second diffusion layer, of the opposite conductivity type, which is isolated from the first diffusion layer. The first conductive film is formed on the first and second insulating films. A part of the first insulating film between the first conductive film and the first diffusion layer is constituted by a third insulating film having a thickness smaller than that of the first insulating film.

REFERENCES:
patent: 4288863 (1981-09-01), Adam
patent: 4425631 (1984-01-01), Adam
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patent: 4870615 (1989-09-01), Maruyama et al.
patent: 4935790 (1990-06-01), Cappelletti et al.
patent: 5225700 (1993-07-01), Smayling
Roger Cuppens, et al., "An EEPROM for Microprocessors and Custom Logic", IEEE ISSCC Tech. Dig., pp. 268, Feb. 1984.
Masataka Takebuchi, et al., "A Novel Integration Technology of EEPROM Embedded CMOS LOGIC VLSI Suitable for ASIC Applications", IEEE CICC Proceedings, 1992.

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