Semiconductor device

Details Semiconductor device Semiconductor device

1992-08-27

1994-10-18

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257400, H01L 2978

Patent

active

053571371

ABSTRACT:
It is the object of this invention to improve the breakdown voltage between the source and the drain of a MOS transistor having radiation resistance. A high concentration impurity having the same polarity as that of the source-drain region is formed below a gate oxide film at both ends in the channel width direction of the source-drain region of the MOS transistor. An impurity region having the same polarity as that of the source-drain region and an impurity concentration lower than that of the source-drain region is formed between the high concentration impurity region and the source-drain region.

REFERENCES:
patent: 3711753 (1973-01-01), Brand et al.
patent: 3752711 (1971-06-01), Komi et al.
patent: 4426766 (1984-01-01), Lee
patent: 4538166 (1985-08-01), Nakano
patent: 4748489 (1988-05-01), Komatsu

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