Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-19
1994-10-18
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257302, 257305, H01L 27108
Patent
active
053571312
ABSTRACT:
A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.
REFERENCES:
patent: 3962713 (1976-06-01), Kendall et al.
patent: 4271418 (1981-06-01), Hiltpold
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4409608 (1983-10-01), Yoder
patent: 4424526 (1984-01-01), Dennard et al.
patent: 4432006 (1984-02-01), Takei
patent: 4460911 (1984-07-01), Salters
patent: 4462040 (1984-07-01), Ho et al.
patent: 4467450 (1984-08-01), Kuo
patent: 4538166 (1985-08-01), Nakano
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4937641 (1990-06-01), Sunami et al.
patent: 5021842 (1991-06-01), Koyanagi
Kawamoto Yoshifumi
Kure Tokuo
Miyao Masanobu
Sunami Hideo
Tamura Masao
Hitachi , Ltd.
Limanek Robert
LandOfFree
Semiconductor memory with trench capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory with trench capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory with trench capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2374610