Semiconductor memory device including redundancy memory cell rem

Static information storage and retrieval – Read/write circuit – Bad bit

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36518902, 3652257, 36518905, G11C 700, G11C 2900

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active

055684327

ABSTRACT:
A sense amplifier portion provides a predetermined number of data among a plurality of data provided from a bit line pair to a multiplexer. A sense amplifier amplifies data provided from a redundancy bit line pair for output to the multiplexer. The multiplexer is controlled by a redundancy control burst counter. When a defect occurs in a memory cell array, the multiplexer provides data provided from the sense amplifier instead of data provided from the sense amplifier portion. When there is no defect, the multiplexer provides predetermined data using data provided from the sense amplifier portion.

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patent: 5416740 (1995-05-01), Fujita et al.
"New Bit Line Architecture for Ultra High Speed SRAMS", Toru Shiomi et al., IEEE 1991 Custom Integrated Circuits Conference.
"A 5.8-NS 256-KB BICMOS TTL SRAM With T-Shaped Bit Line Architecture", Shiomi et al., IEEE Journal of Solid-State Circuits, vol. 28, No. 12, Dec. 1993, pp. 1362-1369.

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