Multi-bit data storage location

Details Multi-bit data storage location Multi-bit data storage location

1995-03-27

1996-10-22

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257312, 257532, 257903, 365149, 365203, 365214, 36523006, H01L 27108, G11C 1124

Patent

active

055679633

ABSTRACT:
A multi-bit data storage location 201 is formed at the face of a layer 502 of semiconductor of a first conductivity type. Storage location 201 includes a first transistor 210 having a source/drain region 308 of a second conductivity type formed in layer 502 and a gate 306 disposed insulatively adjacent a first channel area of layer 502 laterally adjacent source/drain region 308. A second transistor 210 is included having a gate 306 disposed insulatively adjacent a second channel area of layer 502. A first capacitor 211 is provided which includes a capacitor conductor 311 disposed insulatively adjacent a first capacitor area 509 of layer 502, first capacitor area 509 being disposed lateral to the first channel area of first transistor 210. A second capacitor 211 is provided which includes a capacitor conductor 211 disposed insulatively adjacent a second capacitor area 509 of layer 502, the second capacitor area 509 disposed lateral to the second channel area of second transistor 210.

REFERENCES:
patent: 4710896 (1987-12-01), Nagami
patent: 5341326 (1994-08-01), Takase et al.
patent: 5359566 (1994-10-01), Furuyama
patent: 5369612 (1994-11-01), Furuyama
patent: 5406512 (1995-04-01), Kagenishi

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