Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-06-21
1996-10-22
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257530, H01L 2978
Patent
active
055679625
ABSTRACT:
A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.
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Ishizaki Akira
Kohchi Tetsunobu
Miyawaki Mamoru
Momma Genzo
Yuzurihara Hiroshi
Canon Kabushiki Kaisha
Limanek Robert P.
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