Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-03
1997-10-07
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257344, 257357, 257408, H01L 2360, H01L 2978
Patent
active
056751680
ABSTRACT:
An unsymmetrical MOS device is disclosed which includes a semiconductor layer of a first conductive type having a surface having a first area and a second area which is offset from the first area; a gate insulator layer located on the first area of the surface of the semiconductor layer; a gate electrode located on the gate insulator layer; and a source region of a second conductive type and a drain region of the second conductive type each located in the semiconductor layer below the second area of the surface. The electric resistance of an area between the first area of the surface and the surface of the source region is smaller than the electric resistance of an area between the first area of the surface and the surface of the drain region.
REFERENCES:
patent: 5162888 (1992-11-01), Co et al.
patent: 5234853 (1993-08-01), Ikemasu
patent: 5386134 (1995-01-01), Huang
patent: 5493142 (1996-02-01), Randazzo et al.
T. Horiuchi, et al., "A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition Techinque", 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 88-89 (1992).
Hiroki Akira
Hori Atsushi
Kurimoto Kazumi
Miyanaga Isao
Odanaka Shinji
Hardy David B.
Matsushita Electric - Industrial Co., Ltd.
Thomas Tom
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