EPROM, flash memory with high coupling ratio

Details EPROM, flash memory with high coupling ratio EPROM, flash memory with high coupling ratio

1996-04-30

1997-10-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257324, 257760, 3651851, H01L 29788

Patent

active

056751621

ABSTRACT:
A semiconductor device is formed on a substrate lightly doped with a dopant, a source region and a drain region in the substrate on the surface thereof, a dielectric layer deposited upon the substrate, a first floating gate layer formed on the dielectric layer, a second floating gate layer formed on the the first floating gate layer, a second dielectric material deposited upon the surface of the first floating gate electrode, a control gate electrode deposited upon the surface of the additional dielectric material, and means for applying a voltage to the control gate electrode.

REFERENCES:
patent: 4812885 (1989-03-01), Riemenschneider
patent: 5089867 (1992-02-01), Lee
patent: 5225362 (1993-07-01), Bergemont
patent: 5281548 (1994-01-01), Prall
patent: 5293331 (1994-03-01), Hart et al.
patent: 5379253 (1995-01-01), Bergemont
patent: 5381028 (1995-01-01), Iwasa
patent: 5389808 (1995-02-01), Arai
patent: 5434813 (1995-07-01), Tamura et al.
patent: 5453393 (1995-09-01), Bergemont

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