Semiconductor memory device having an internal amplification fun

Details Semiconductor memory device having an internal amplification fun Semiconductor memory device having an internal amplification fun

1996-03-15

1997-10-07

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257300, 257301, H01L 27108

Patent

active

056751605

ABSTRACT:
In a DRAM memory cell comprising one capacitor having a capacitor electrode and an opposing electrode, and one insulated gate field effect transistor formed in a semiconductor substrate and having a pair of source/drain regions, one of which is connected to the capacitor electrode of the capacitor. A double gate thin film transistor having the same channel conductivity type as that of the insulated gate field effect transistor, is formed above the insulated gate field effect transistor. A first gate electrode of the thin film transistor is constituted of a gate electrode of the insulated gate field effect transistor, and a second gate electrode of the thin film transistor is constituted of the capacitor electrode of the capacitor. A source region of the thin film transistor and the other of the pair of source/drain regions of the insulated gate field effect transistor is connected to a bit line, and a drain region of the thin film transistor is connected to a power supply line.

REFERENCES:
patent: 4920391 (1990-04-01), Uchida
patent: 5463234 (1995-10-01), Toriumi et al.

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