Low power, bipolar, wide bandwidth unity gain buffer

Details Low power, bipolar, wide bandwidth unity gain buffer Low power, bipolar, wide bandwidth unity gain buffer

1998-09-30

2000-04-18

Pascal, Robert

Amplifiers

With semiconductor amplifying device

Including push-pull amplifier

330267, H03F 318

Patent

active

060520280

ABSTRACT:
The bandwidth of a bipolar complementary emitter follower unity gain buffer is proportionally dependent upon the idle current of the input stage (Q1, Q2) that drives the base nodes of the NPN (Q3) and PNP (Q4) emitter follower output transistors. A high bandwidth typically requires a high idle current. The bandwidth and slew rate of a unity gain buffer are improved without increasing the idle circuit by adding a circuit (Q9-Q12)to sense when a transient is occurring and increasing the positive or negative bias current only during the positive or negative transient. Shunt diodes (Q5, Q6) (base-emitter junctions) can be added across the input transistor emitters to shunt some of the input stage idle current into the opposing current source. This will reduce the idle current at the output stage and reduce the power dissipation of the input stage without sacrificing the available current to drive the base nodes of the output transistors.

REFERENCES:
patent: 5179355 (1993-01-01), Harvey
patent: 5578967 (1996-11-01), Harvey
patent: 5614866 (1997-03-01), Dow
Bipolar Process Drives ATE Pin Electronics, John Bond, Test & Measurement World, Apr., 1992, p. 93.
RC7315/RC7315T Three-State ATE Pin Electronics Driver, Raytheon Data Sheet, Jul. 1992, p. 1-2.
200-MHz Pin Driver for ATE for VLSI and memory test: ECL, TTL & CMOS Ad1324 has 2-V
s slew rate, 200 ps edge match, New-Product Briefs Data Sheet, Analog Dialogue, 1993 p. 27-1.
High-Speed buffer Amplifier, Burr Brown Data Sheet, p. 3.1.3.
250mA High-Speed Buffer, Burr Brown Data Sheet, p. 3.1.18.
Data Sheet of a buffer from Harris Semiconductor.

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