Semiconductor device

Details Semiconductor device Semiconductor device

1996-03-29

1998-01-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257735, 257758, 257774, 438623, 438673, H01L 2348, H01L 2352

Patent

active

057058563

ABSTRACT:
A semiconductor device has a connection electrode and protective film formed of organic material and covering the connection electrode. An opening is formed in the protective film to expose the connection electrode. A natural oxide layer is etched by argon-based dry etching. The surface layer of the protective film is altered to reduce the insulativity in the dry etching process. After a projection electrode is formed on the connection electrode later, the altered surface layer of the protective film is removed by oxygen-based dry etching. As no altered surface layer remain on the protective film, an adverse affect such as inadequate insulation does not occur.

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patent: 5108950 (1992-04-01), Wakabayashi et al.
patent: 5244833 (1993-09-01), Gansauge et al.
patent: 5538920 (1996-07-01), Wakabayashi
Ostmann, `The Pretreatment of Al Bondpads,` IEEE pp.74-78, Mar. 15, 1993.
Lo,`Backsputtering Etch Studies` Solid State Tech. Jun.1990.
Patent Abstracts of Japan, vol. 9, No. 27 (E-294) Feb. 6, 1985 & JP-A-59 172 745 (Matsushita Denshi Kogyo KK).
Proceedings of the IEEE Multi-Chip Module Conference MCMC-93, Santa Cruz, CA., US, pp. 74-78, Ostmann et al "The pretreatment of aluminium bondpads for electroless nickel plating".
Solid State Technology, vol. 33, No. 6, Jun. 1990, Washington, US, pp.91-94, Lo and Tjhia "Backsputtering etch studies in wafer bumping process".

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