Method of forming a wiring layer for a semiconductor device

Details Method of forming a wiring layer for a semiconductor device Method of forming a wiring layer for a semiconductor device

1994-10-14

1997-05-27

Myers, Helane

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438675, 438654, H01L 21465, B44L 122, C03C 1500, C23F 100

Patent

active

056332076

ABSTRACT:
A method of forming a wiring layer for a semiconductor device forms a first layer on a dielectric film on a substrate to protect integrated circuit devices from overpolishing when a wiring layer is formed on a second layer above the polish stop layer. The wiring layer is deposited using selective chemical vapor deposition to prevent contamination of the wafer.

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