Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-06-07
2000-04-18
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438641, 438674, 438677, H01L 2100, H01L 2102, H01L 2190, H01L 21283
Patent
active
RE0366633
ABSTRACT:
In an improved selection tungsten metallization system, a plurality of orifices (20) are cut into a first level dielectric layer (18). A nucleation layer (52), preferably Ti-W alloy, is then formed in each orifice (20) and on the outer surface of the first dielectric layer (18) in a second-level metallization pattern. A second dielectric layer (30) is deposited over the first dielectric layer (18) and the nucleation layer (52), and a reverse second level metallization pattern is used to etch slots (58) back down to the nucleation layers (52) and into orifices (20). Thereafter, tungsten is deposited by selective CVD to fill the first level orifices (20) and the second level slots (58) until the upper surfaces (62) of the tungsten conductors (60) are substantially coplanar with the upper surface (38) of the second dielectric layer (30).
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Bonifield Thomas D.
Smith Gregory C.
Chaudhari Chandra
Donaldson Richard L.
Lake Rebecca Mapstone
Texas Instruments Incorporated
Whipple Matthew
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