Semiconductor device with diode and capable of device protection

Details Semiconductor device with diode and capable of device protection Semiconductor device with diode and capable of device protection

1995-10-31

1997-01-21

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257360, 257494, H01L 2362

Patent

active

055962165

ABSTRACT:
A semiconductor device with a diode is provided, which enables a low operating resistance after breakdown and a small chip area. A first impurity doped region of a first conductivity type acting one part of the diode is formed in a semiconductor substrate. A second impurity doped region of a second conductivity type acting the other part of the diode is formed in the substrate. The first and second impunity doped regions produce a first p-n junction at their interface. A third impurity doped region of the first conductivity type is formed in the second impurity doped region to be electrically connected to the first impunity doped region. The third and second impunity doped region produce a second p-n Junction at their interface. When a reverse voltage is applied across the first and second impurity doped regions, a first depletion region is created near the first p-n junction and a second depletion region is created near the second p-n junction. When an excessive, reverse voltage is applied across the first and second impurity doped regions, the first and second depletion regions merge together. The substrate may act as the first impurity doped region.

REFERENCES:
Japanese Non-Examined Patent Publication No. 64-80073 (with English statement of relevance), Mar. 1989.

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