Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-03-22
1998-01-06
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 19, 117 30, C30B 1522
Patent
active
057049742
ABSTRACT:
When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.
REFERENCES:
patent: 4618396 (1986-10-01), Shimoda et al.
patent: 5306387 (1994-04-01), Fusegawa et al.
Ikari Atsushi
Izunome Koji
Kawanishi Souroku
Kimura Shigeyuki
Sasaki Hitoshi
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
Mitsubishi Materials Corporation
Nippon Steel Corporation
Research Development Corporation of Japan
LandOfFree
Growth of silicon crystal from melt having extraordinary eddy fl does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth of silicon crystal from melt having extraordinary eddy fl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of silicon crystal from melt having extraordinary eddy fl will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2324944