Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Patent
1998-07-20
2000-01-25
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
257356, 257904, H01L 2711, H01L 2360
Patent
active
060181680
ABSTRACT:
Semiconductor memory devices include a plurality of word line reverse diodes located at alternating ends of a plurality of parallel word lines. A plurality of well bias tapping regions are also located at alternating ends of the plurality of parallel word lines, but at opposite ends of the word lines from the plurality of reverse diodes. A compact semiconductor memory device is thereby provided.
REFERENCES:
patent: 4408385 (1983-10-01), Mohan Rao et al.
patent: 5293559 (1994-03-01), Kim et al.
patent: 5373476 (1994-12-01), Jeon
patent: 5446689 (1995-08-01), Yasui et al.
patent: 5936282 (1999-08-01), Baba et al.
Shone et al., "Gate Oxide Charging and Its Elimination for Metal Antenna Capacitor and Transistor in VLSI CMOS Double Layer Metal Technology", 1989 Symposium on VLSI Technology Digest of Technical Papers, May 22-25, 1989, Kyoto, Japan, pp. 73-74.
Tsunokuni et al., "The Effect of Charge Build-up on Gate Oxide Breakdown During Dry Etching", Extended Abstracts of the 19.sup.th Conference on Solid State Devices and Materials, Tokyo-1987, pp. 195-198.
Munson Gene M.
Samsung Electronics Co,. Ltd.
LandOfFree
Semiconductor memory devices having alternating word line revers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory devices having alternating word line revers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory devices having alternating word line revers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2317581