Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1982-10-15
1985-08-13
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
136261, 156DIG64, 156DIG70, 427 86, C30B 2504, C30B 300
Patent
active
045348200
ABSTRACT:
A thin film of a metal of which eutectic or compound is produced together with a semiconductor which is to be grown in its crystalline form is deposited on an amorphous (quartz glass) substrate. The thin film is patterned with a periodic pattern of a polygon having cross angles of multiples of about 60.degree., then the resulting substrate is heated at a temperature higher than the eutectic temperature of the metal and the semiconductor, and the semiconductor is deposited on the thin film under such heating condition, so that a crystalline film of the semiconductor is precipitated on the substrate. Such crystalline film is grown on a planar substrate at a low temperature of about eutectic temperature.
REFERENCES:
patent: 4058418 (1977-11-01), Lindmayer
patent: 4333792 (1982-06-01), Smith
patent: 4350561 (1982-09-01), Little
Diataxial Growth of Silicon and Germanium, Klykov et al., Journal of Crystal Growth, 52, (1981), pp. 687-691.
CW Laser Recrystallization of <100> Si on Amorphous Substrates, Gibbons et al., Appl. Phys. Lett., 34 (12) Jun. 15, 1979.
Fifth International Conference on Vapor Growth and Epitaxy, Jul. 19-24, 1981--pp. 195 and 196.
From "Fifth International Conference on Vapor Growth and Epitaxy", Jul. 19-24, 1981--pp. 199 and 200.
Silicon Graphoepitaxy Using a Strip-Heater Oven, by Geis et al., Sep. 1, 1980, pp. 454-456.
Crystallographic Orientation of Silicon--by Geis et al., Jul. 1, 1979, pp. 71-74.
Ikeda Masahiro
Mori Hidefumi
Bernstein Hiram H.
Carrier Joseph P.
Nippon Telegraph & Telephone Public Corporation
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