Semiconductor memory

Static information storage and retrieval – Systems using particular element – Semiconductive

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365189, G11C 1300

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active

046086668

ABSTRACT:
A large capacity and high speed semiconductor memory is disclosed. Static memory cell rows are provided so as to correspond to dynamic memory cell rows in a dynamic memory cell array. Information is transferred with transfer means between static memory cells in the static memory cell rows and dynamic memory cells corresponding thereto. Access for a read/write operation externally required is effected to static memory cell rows.

REFERENCES:
patent: 4271487 (1981-06-01), Craycraft et al.
patent: 4363110 (1982-12-01), Kalter et al.
English-Language Abstract of Japanese Patent Document 57-186289.
F. Baba et al, "A 35ns 64K Static Column DRAM", IEEE, ISSCC Digest of Technical Papers, Feb. 21, 1983.
Abstract, the Transactions of the IECE of Japan, vol. E66, No. 1, (Jan. 1983).
M. Yamada et al, "A 64K bit MOS Dynamic RAM with Auto/Self Refresh Functions", Transactions of the IECE of Japan, vol. J66-C, No. 1, (1983).

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