Non-monocrystalline silicon carbide semiconductor and semiconduc

Details Non-monocrystalline silicon carbide semiconductor and semiconduc Non-monocrystalline silicon carbide semiconductor and semiconduc

1994-08-11

1996-04-23

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 66, 257 76, 257443, 257463, 437100, H01L 310312, H01L 2976, H01L 3106, H01L 21205

Patent

active

055106315

ABSTRACT:
A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4465750 (1984-08-01), Ogawa et al.
patent: 4769682 (1988-09-01), Yang et al.
patent: 5298767 (1994-03-01), Shor et al.
Mahan et al., "Small Angle X-Ray Scattering from Microvoids in the a-SiC:H Alloy," IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2859-2862.

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