Semiconductor device having an interconnected film with tapered

Details Semiconductor device having an interconnected film with tapered Semiconductor device having an interconnected film with tapered

1992-05-04

1993-08-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257754, 257757, 257764, H01L 2976, H01L 2348

Patent

active

052412075

ABSTRACT:
A semiconductor device comprises an element separating insulation film formed on a main surface of a silicon substrate, an insulation film formed to project from the edge portion of the element separating insulation film onto a part of a silicon region of the substrate and having a thickness smaller than the thickness of the element separating insulation film, a first metal silicide film formed to cover the element separating insulation film and the thin insulation film in the vicinity of the edge portion of the element separating insulation film, a second metal silicide film formed on the silicon region in the vicinity of the thin insulation film, and a third metal silicide film formed in the vicinity of the tip portion of the thin insulation film for connecting the first and and second metal silicide films.

REFERENCES:
patent: 4519126 (1985-05-01), Hsu
patent: 4648175 (1987-03-01), Metz, Jr. et al.
patent: 4808555 (1989-02-01), Mauntel et al.
patent: 4851257 (1989-07-01), Young et al.
patent: 4914501 (1990-04-01), Rivoli et al.
patent: 5028975 (1991-07-01), Nagasawa et al.
patent: 5053349 (1991-10-01), Matsuoka
patent: 5121185 (1992-06-01), Wong et al.

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