Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1990-11-15
1993-08-31
Hamilton, Cynthia
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430270, 430287, 556433, 528 35, 522148, G03F 7027, G03F 7038, G03F 7075
Patent
active
052408132
ABSTRACT:
Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.
REFERENCES:
patent: 3296197 (1967-01-01), Wu
patent: 3318935 (1967-05-01), Sporck
patent: 3424779 (1969-01-01), Wu
patent: 4863833 (1989-09-01), Fukuyama et al.
patent: 5057396 (1991-10-01), Tanaka et al.
Chemistry of Materials, 1989, 1, pp. 572-574, Shea et al., "Aryl-Bridged Polysilsesquioxanes-New Microporous Materials".
Patent Abstracts of Japan, vol. 11, No. 60, 61 221 232, Oct. 1, 1986.
Patent Abstracts of Japan, vol. 13, No. 536, 61 221 431, Sep. 4, 1989.
Patent Abstracts of Japan vol. 14, No. 275, 2 084 435, Mar. 26, 1990.
Patent Abstracts of Japan, vol. 8, No. 93, 59 011 374 Jan. 20, 1984.
Journal of the Electrochemical Soc., vol. 137, No. 10, Oct. 1990, pp. 3223-3229 Oikawa et al., "Polysilphenylenesilocane resin as an Interlevel Dielectric for VLSI Multilevel Interconnections".
Fukuyama Shun-ichi
Namiki Takahisa
Oikawa Akira
Watanabe Keiji
Yamagami Masaaki
Fujitsu Limited
Hamilton Cynthia
LandOfFree
Polysilphenylenesiloxane, production process thereof, and resist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polysilphenylenesiloxane, production process thereof, and resist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilphenylenesiloxane, production process thereof, and resist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2296686