Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-11-15
1999-07-13
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, 438166, H01L 2100, H01L 2184
Patent
active
059239670
ABSTRACT:
In the method for fabricating a TFT utilizing a polycrystalline silicon thin film as an intrinsic semiconductor region, a polycrystalline silicon thin film, a gate insulating film and a gate electrode are formed in this order on a substrate. An anodic oxide film is formed on a surface of the gate electrode for providing an offset thereto. The polycrystalline silicon thin film is then doped with hydrogen using the gate electrode having the offset as a mask to form hydrogen containing regions. The heating treatment for about one hour or more in a range of about 300.degree. C. to about 450.degree. C. is performed for hydrogenation of the polycrystalline silicon film. Impurities such as P or B are introduced to form contact regions (n.sup.+ regions or p.sup.+ regions) and then the introduced impurities are activated by irradiation of an excimer laser. An interlayer insulating film, source/drain electrodes and a protection film are further formed, thereby completing the TFT.
REFERENCES:
patent: 4613382 (1986-09-01), Katayama et al.
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5620906 (1997-04-01), Yamaguchi et al.
Lebentritt Michael S.
Niebling John F.
Sharp Kabushiki Kaisha
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