Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-12
1999-07-13
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257341, 257342, 257346, H01L 2976
Patent
active
059230657
ABSTRACT:
This invention discloses a MOSFET device in a semiconductor chip with a top surface and a bottom surface. The MOSFET device includes a drain region, doped with impurities of a first conductivity type, formed in the semiconductor chip near the bottom surface. The MOSFET device further includes a vertical pn-junction region, which includes a lower-outer body region, doped with impurities of a second conductivity type, formed on top of the drain region. The pn-junction region further includes a source region, doped with impurities of the first conductivity type, formed on top of the lower-outer body region wherein the lower-outer body region defining a channel region extending from the source region to the drain region near the top surface. The MOSFET device further includes a gate formed on top of the channel region on the top surface. The gate includes a thin insulative bottom layer for insulating from the channel region. The gate is provided for applying a voltage thereon for controlling a current flowing from the source region to the drain region via the channel region. The MOSFET device further includes a deep heavily doped body-dopant region disposed immediately below the source region in the lower-outer body region. It is implanted with a higher concentration of dopant than the lower-outer body region whereby a device ruggedness of the MOSFET device is improved. The deep heavily-doped body-dopant region having a body-dopant concentration profile defined by a diffusion of the body-dopant from an implant depth about twice as that of a source implant-depth whereby the deep heavily-doped body dopant region is kept at a distance away from the channel region.
REFERENCES:
patent: 4837606 (1989-06-01), Goodman et al.
Hshieh Fwu-Iuan
Lin True-Lon
Nim Danny Chi
So Koon Chong
Tsui Yan Man
Lin Bo-In
MegaMos Corporation
Tran Minh Loan
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