Semiconductor device having gate electrode spacing dependent upo

Details Semiconductor device having gate electrode spacing dependent upo Semiconductor device having gate electrode spacing dependent upo

1991-04-25

1993-08-03

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257775, 257900, H01L 2968

Patent

active

052332128

ABSTRACT:
A semiconductor device includes a plurality of gate electrodes (6a, 6b, 6c, 6d) arranged on the surface of a semiconductor substrate (1) with insulating layers (5, 8) covering the top and the side walls of the gate electrodes. The spaces between the opposing side walls of adjacent gate electrodes on the surface of the element isolation region (2) re smaller than twice the thickness of the thinnest insulating layer (8) among the insulating layers of the side walls of the gate electrodes on the surface of the active regions. The space (14) between the gate electrodes on the element isolation region is filled with the insulating isolation layer (8) so that unevenness in the underlying portion on the element isolation region on which the conductive interconnection layer (10) to be formed is reduced, preventing thinning of the conductive interconnection layer and disconnection due to excessive etching of a resin film in patterning the conductive interconnection layer.

REFERENCES:
patent: 4894696 (1990-01-01), Takeda et al.
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 5043298 (1991-08-01), Yamada et al.
patent: 5049957 (1991-09-01), Inoue et al.
Wakamiya et al, "Novel Stacked Capacitor Cell for 64Mb DRAM", VLSI Technology Symposium (1989), pp. 69-70.

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