Underlayer doping in thin film magnetic recording media

Details Underlayer doping in thin film magnetic recording media Underlayer doping in thin film magnetic recording media

1992-10-15

1993-08-03

Pianalto, Bernard

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427131, 427132, 427250, 4272552, 4272553, 4272557, 427295, 428 64, 428336, 428695, 428900, 428928, B05D 512

Patent

active

052325660

ABSTRACT:
The magnetic properties of a cobalt based, thin film, magnetic recording layer are controlled, independent of controlling the process for depositing the magnetic layer itself, by the introduction of process compatible dopant gases into an argon atmosphere during the vacuum deposition (i.e. a sputtering process or an evaporation process) of a chromium based underlayer upon which the magnetic layer is subsequently deposited. The same or a different dopant may also be introduced into the magnetic layer. The process compatible dopant gases described contain oxygen, nitrogen and/or carbon, and mixtures thereof, and include the group purified air, oxygen, nitrogen, a mixture of oxygen and nitrogen, carbon monoxide, carbon dioxide, methane and water vapor.

REFERENCES:
patent: 4231816 (1980-11-01), Cuomo et al.
patent: 4640755 (1987-02-01), Sato
patent: 4749459 (1988-06-01), Yamashita et al.
patent: 4803130 (1989-02-01), Skorjanec et al.
patent: 4828905 (1989-05-01), Wada et al.

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