Nonvolatile semiconductor memory device with multiple word line

Details Nonvolatile semiconductor memory device with multiple word line Nonvolatile semiconductor memory device with multiple word line

1996-06-10

1997-09-30

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518511, 36518513, 36523006, G11C 1134

Patent

active

056732236

ABSTRACT:
A nonvolatile semiconductor memory device such as a NAND FLASH memory device has a plurality of word line voltage generators, each one generating a different word line voltage for application via a row decoder to the control gates of a corresponding row of memory cells in the matrix. The various word line voltages are selected so as to compensate for the body effects that vary transistor threshold voltages along the memory NAND string, thereby ensuring that adequate read voltage appears at the bit lines to ensure read data accuracy.

REFERENCES:
patent: 5101378 (1992-03-01), Radjy et al.
patent: 5301144 (1994-04-01), Kohno
patent: 5587948 (1996-12-01), Nakai

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