Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-20
2000-10-10
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 53, 257 66, 257 72, 257348, 257349, 257350, 257 57, 257 59, H01C 2978
Patent
active
061304557
ABSTRACT:
A semiconductor device includes: a substrate; a line formed on the substrate; and a crystalline semiconductor film containing silicon connected to the line. The crystalline semiconductor film is crystallized by annealing where a constituting material of the line functions as a catalyst.
REFERENCES:
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5886364 (1999-03-01), Zhang
Murata Yasuaki
Yoshinouchi Atsushi
Abraham Fetsum
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor device, thin film transistor having an active crys does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, thin film transistor having an active crys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, thin film transistor having an active crys will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2258724