Semiconductor memory device and a method for fabricating the sam

Details Semiconductor memory device and a method for fabricating the sam Semiconductor memory device and a method for fabricating the sam

1997-10-03

2000-10-10

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257758, H01L 27108, H01L 2976, H01L 2994, H01L 31119, H01L 2940

Patent

active

061304492

ABSTRACT:
A semiconductor memory device and a method of fabricating the same are provided, in which an interlayer film which only covers a peripheral circuit region except a memory cell array region is formed above the peripheral circuit region to reduce a topological difference between both regions after bitlines are formed, therefore a semiconductor substrate which has a plain surface as a main one can be used as a starting body with no preliminary processing thereon and a shallow trench isolation technique can also be applied, besides interconnects to the peripheral circuit can be led up to the surface of the device through a multi-step plug connection and thereby processing of large aspect-ratio holes, stuffing of metal in the holes and the like are unnecessary and as a result reliability of the process is improved.

REFERENCES:
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patent: 5448512 (1995-09-01), Hachisuka et al.
patent: 5623164 (1997-04-01), Auer et al.
patent: 5717251 (1998-02-01), Hayashi et al.
patent: 5748521 (1998-05-01), Lee
patent: 5838038 (1998-11-01), Takashima et al.

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