Method of preparing passivated copper line and device manufactur

Details Method of preparing passivated copper line and device manufactur Method of preparing passivated copper line and device manufactur

1999-01-04

2000-10-10

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438652, 438658, 438705, 438669, 438685, H01L 2144, H01L 21443

Patent

active

061301620

ABSTRACT:
A method of forming a copper conductor for a thin film electronic device comprises: forming layers over a conductor into a stack of barrier layer superjacent on top of the substrate, a copper layer on top of the barrier layer, and a hard mask layer on top of the copper layer. The forming a mask on top of the hard mask layer and pattern the stack by etching through the layers down to the substrate on the sides of the mask forming the copper layer into a copper conductor line and leaving sidewalls of the copper conductor line exposed. Grow a copper germanide (Cu.sub.3 Ge) compound passivation layer is selectively grown only on the sidewalls of the copper conductor line.

REFERENCES:
patent: 5060050 (1991-10-01), Tsuneoka et al.
patent: 5288456 (1994-02-01), Aboelfotoh et al.
patent: 5420069 (1995-05-01), Joshi et al.
patent: 5674787 (1997-10-01), Zhoa et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5731245 (1998-03-01), Joshi et al.
patent: 5909637 (1999-06-01), Charneski et al.
patent: 6046108 (2000-04-01), Liu et al.

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