Silica-based anti-reflective planarizing layer

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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65 31, 106 16, 156646, 156652, 156656, 156657, 1566591, 1566611, 156663, 156904, 427 431, 430 5, 430270, 430318, 430323, B44C 122, C03C 1500, C03C 2506, C23F 102

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active

051005034

ABSTRACT:
There is disclosed a dyed, spin-on glass composition with a high carbon content for use in providing antireflective planarizing layers on substrates such as semiconductor silicon wafers. These layers can be used as hard masks by etching patterns therein. These hard masks can be used in multilayer resists and in making lithography masks. Methods for producing these hard-masks are also provided.

REFERENCES:
patent: 4269935 (1981-05-01), Masters et al.
patent: 4493886 (1985-01-01), Lauks
patent: 4557797 (1985-12-01), Fuller et al.
patent: 4563241 (1986-01-01), Tanaka et al.
patent: 4587138 (1986-05-01), Yau et al.
patent: 4620986 (1986-11-01), Yau et al.
patent: 4621042 (1986-11-01), Pampalone et al.
patent: 4835089 (1989-05-01), Iwayanagi et al.

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