Method to form an encapsulation layer over copper interconnects

Details Method to form an encapsulation layer over copper interconnects Method to form an encapsulation layer over copper interconnects

1999-07-16

2000-10-10

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438633, 438637, 438653, 438656, 438671, 438672, 438683, 438685, 427305, 427355, 427427, 4274431, H01L 2144

Patent

active

061301574

ABSTRACT:
A method to form copper interconnects with an improved encapsulation layer is achieved. A substrate layer is provided. Conductive traces are provided overlying the substrate layer. A first intermetal dielectric layer is deposited overlying the conductive traces. The first intermetal dielectric layer is etched through to the underlying conductive traces where the first intermetal dielectric layer is not protected by a photoresist mask to form interconnect trenches. A barrier layer is deposited overlying the first intermetal dielectric layer and exposed the conductive traces. A copper layer is deposited overlying the barrier layer and filling the interconnect trenches. The copper layer and the barrier layer are polished down to the top surface of the first intermetal dielectric layer to define copper interconnects. An encapsulation layer is formed overlying the copper interconnects wherein the encapsulation layer is not formed overlying the first intermetal interconnect layer and wherein the encapsulation layer is at least partially comprised of tungsten nitride. A second intermetal dielectric layer is deposited and the fabrication of the integrated circuit device is completed.

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