Semiconductor device and fabrication process thereof

Details Semiconductor device and fabrication process thereof Semiconductor device and fabrication process thereof

1998-03-30

2000-10-10

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438625, 438636, 438648, 438783, H01L 214763, H01L 2131

Patent

active

06130154&

ABSTRACT:
A semiconductor device with satisfactory bonding avility of a plasma SiOF oxide layer on a wiring and satisfactory burying ability for buring wiring space portions. The semiconductor device is deposited by forming a metal layer to be a base of wiring on a semiconductor substrate, forming an anti-reflection layer of a refractory metal or compound thereof, on the metal layer, and forming an insulation layer on the anti-reflection layer. There after, the insulation layer is patterned and a wiring is patterned by etching the anti-reflection layer and the metal layer to be the base of the wiring with taking the patterned insulation layer as a mask with leasing the anti-reflection layer and the insulation layer on the wiring. Subsequently, the patterned wiring is buried with an SiOF layer as an Si oxide layer containing fluorine, together with the anti-reflection layer and the insulation layer on the upper surface.

REFERENCES:
patent: 5827778 (1998-10-01), Yamada
patent: 5960310 (1999-09-01), Jeong
patent: 5960317 (1999-09-01), Jeong
Woo Sik Yoo, et al., "Intermetal Dielectric Gap Fill by Plasma Enhanced Chemical Vapor Deposited Fluorine-Doped Silicon Dioxide Films", Jpn. J. Appl. Phys., vol. 35, Part 2, No. 3A, pp. 273-275, Mar. 1996.

Affiliated with

Also associated with

Rating

Semiconductor device and fabrication process thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and fabrication process thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and fabrication process thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2256387