Plasma reaction apparatus and plasma reaction

Details Plasma reaction apparatus and plasma reaction Plasma reaction apparatus and plasma reaction

1997-03-03

2000-10-10

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, 438758, 438789, 427572, 427579, H01L 21316

Patent

active

061301183

ABSTRACT:
A process for depositing a film at a high rate and with superior step coverage properties, which comprises installing a pair of electrodes crossing with another pair of electrodes making a right angle with respect to the another pair, and applying a high frequency power differing in phase to the electrodes in order to apply a high frequency power having a Lissajous' waveform in the reaction space during the deposition of a film on a substrate.

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