Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-04-17
2000-10-10
Dutton, Brian
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, H01L 2100, H01L 218242
Patent
active
061301035
ABSTRACT:
An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to the some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer, preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element. A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200.degree. to 350.degree. C. and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800.degree. C. after high-energy hydrogen steps restores ferroelectric properties.
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Cuchiaro Joseph D.
Furuya Akira
Miyasaka Yoichi
Paz De Araujo Carlos A.
Dutton Brian
NEC Corporation
Symetrix Corporation
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