MOS type semiconductor device

Details MOS type semiconductor device MOS type semiconductor device

1996-05-06

1998-03-03

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257487, H01L 2994, H01L 2906

Patent

active

057238901

ABSTRACT:
A MOS type semiconductor device with improved voltage and avalanche withstand capability includes a rectangular channel region of the second conductivity type formed in a surface layer of a semiconductor substrate of the first conductivity type, a heavily doped well region formed in the central part of the channel region, source regions of the first conductivity type formed in a surface layer of the channel region, and a surface MOS structure. The quadrangular cells are arranged so that a side of the cell may contact with a side of the neighboring cell. By joining the short sides of the neighboring channel regions, protruding portions such as the corners, to which the avalanche current tend to localize, of the channel region are eliminated. As a result, the avalanche withstand capability of the MOSFET is improved. Further, since the curvature of the depletion layer becomes small, the withstand voltage is improved.

REFERENCES:
patent: 4801986 (1989-01-01), Chang et al.
patent: 5208471 (1993-05-01), Mori et al.
patent: 5286984 (1994-02-01), Nakagawa et al.
patent: 5396097 (1995-03-01), Robb et al.

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