Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

1996-06-27

1998-03-03

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257655, H01L 27108

Patent

active

057238871

ABSTRACT:
A storage node electrode formed of doped amorphous silicon is provided on a silicon substrate. Silicon crystal grains are formed on the surface of the storage node electrode by annealing it in the atmosphere including PH.sub.3. A capacitor insulating film and a cell plate electrode are formed to cover the surface of the storage node electrode including silicon crystal grains. Larger silicon crystal grains are accordingly provided on the surface of the storage node electrode, resulting in increased capacitance of the capacitor.

REFERENCES:
patent: 5612558 (1997-03-01), Harshfield
patent: 5623243 (1997-04-01), Watanabe et al.
Applied Physics, vol. 61, No. 11, pp. 1147-1151, by Watanabe, Sep. 1992.

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