Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-13
1998-03-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257410, 257411, 365 65, 365104, 365117, 365145, 365177, 365184, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057238855
ABSTRACT:
A non-volatile semiconductor device can be obtained which is capable of enhancing integration level and performing accurate control of operations. A memory cell transistor of the semiconductor device in accordance with the present invention has a gate dielectric film including a ferroelectric film between a gate electrode and a semiconductor region. A back electrode is formed at the semiconductor region in a position corresponding to the gate electrode. A channel is formed at a channel formation region of the semiconductor region by applying a voltage to the back electrode, and the ferroelectric film is polarized as desired by the difference in potential between the channel and the gate electrode. Information can thus be written into the memory cell.
REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 5515311 (1996-05-01), Mihara
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5612574 (1997-03-01), Summerfelt et al.
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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