Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-05-15
1999-04-20
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257760, 257765, H01L 2348
Patent
active
058959750
ABSTRACT:
A metal pillar via structure, formed in a composite dielectric layer, contacting an underlying first level metallization structure, and contacting an overlying second level metallization structure, has been developed. The sides of the metal pillar via structure are first encapsulated with insulator sidewall spacers, and than by a composite dielectric layer, with the top surface of the metal pillar via structure, planar with the top surface of the composite dielectric layer. The metal pillar via structure is comprised of a refractory metal such as tungsten.
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Ackerman Stephen B.
Eckert II George C.
Martin-Wallace Valencia
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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