Dynamic memory

Static information storage and retrieval – Systems using particular element – Capacitors

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365226, G11C 1124

Patent

active

042597293

ABSTRACT:
A memory stable against variation of an external supply voltage is disclosed. The memory comprises a plurality of memory cells, each of memory cells including an insulated-gate field-effect transistor having a gate coupled to a word line, a source and a drain, one of the source and drain being coupled to a digit line, and an information storage capacitor having a first electrode coupled to the other of the source and drain of the transistor and a second electrode, and means for biasing the second electrode with a stabilized voltage.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 4086662 (1978-04-01), Itoh
patent: 4163243 (1979-07-01), Kamins et al.
Coe et al, Enter the 16,384-bit RAM, Electronics, 2/19/76, pp. 116-121.
Gray et al, Power Supply Stabilization Circuit, IBM Technical Disclosure Bulletin, vol. 21, No. 4, 9/78, pp. 1384-1385.
Boosntra et al., "A 4896-6 One-Transistor Per Bit Random-Access Memory with Internal Timing and Low Dissipation", IEEE Journal of Solid State Circuits, 10/73, pp. 305-310, vol. sc-8, No. 5.

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