Lightly doped drain MOSFET with reduced on-resistance

Details Lightly doped drain MOSFET with reduced on-resistance Lightly doped drain MOSFET with reduced on-resistance

1988-06-24

1993-08-17

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257409, H01L 2362

Patent

active

052371930

ABSTRACT:
Construction method and apparatus for lightly doped drain MOSFET that has low or minimum drift on-state resistance and maintains high voltage blocking in the off-state. Temperature sensitivity of the electrical properties of the MOSFET are also reduced relative to MOSFETs produced by processes such as SIPOS. Voltage level shifting of p-channel and n-channel MOSFETs, produced according to the invention, relative to another voltage level is easily accomplished.

REFERENCES:
patent: 4290078 (1981-09-01), Ronen
patent: 4308549 (1981-12-01), Yeh
patent: 4630085 (1986-12-01), Koyama
patent: 4642881 (1987-02-01), Matsukawa et al.
patent: 4757362 (1988-07-01), Biwa et al.
patent: 4766474 (1988-08-01), Nakagawa et al.
patent: 4922327 (1990-05-01), Mena et al.
patent: 4947232 (1990-08-01), Ashida et al.

Affiliated with

Also associated with

Rating

Lightly doped drain MOSFET with reduced on-resistance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lightly doped drain MOSFET with reduced on-resistance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lightly doped drain MOSFET with reduced on-resistance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2246220