High pressure nitridation of tungsten

Details High pressure nitridation of tungsten High pressure nitridation of tungsten

1996-03-18

1999-04-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438675, 438685, 438688, H01L 2144

Patent

active

058952683

ABSTRACT:
Disclosed is a method for forming a refractory metal nitride layer which is highly suitable for diffusion barrier formation in CMOS structures. The process comprises first, forming a refractory metal layer and patterning therefrom a tungsten plug. The tungsten plug is then placed in a furnace where it is heated in an environment containing nitrogen at a high pressure. The high pressure allows efficient tungsten nitride formation at a low temperature so as to form tungsten nitride. In one embodiment, the furnace environment comprises ammonia, the pressure is about 25 atmospheres, and the temperature is about 500.degree. C. The tungsten nitride is a diffusion barrier that is formed between a tungsten plug and a superadjacent aluminum interconnect line that is deposited thereover in a CMOS memory structure.

REFERENCES:
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5318924 (1994-06-01), Lin et al.
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5633200 (1997-05-01), Hu

Affiliated with

Also associated with

Rating

High pressure nitridation of tungsten does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High pressure nitridation of tungsten, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High pressure nitridation of tungsten will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2244312